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Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices

Published online by Cambridge University Press:  01 February 2011

Christian Hecht ,
Bernd Thomas ,
Rene Stein  and
Peter Friedrichs
Christian Hecht
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, Erlangen, 91058, Germany, +49 9131 734336, +49 9131 723046
Bernd Thomas
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058 Erlangen, Germany
Rene Stein
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058 Erlangen, Germany
Peter Friedrichs
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co. KG, Guenther-Scharowsky-Strasse 1, D-91058 Erlangen, Germany
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Abstract

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 6×100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm runs will be shown and compared to results of the former 7×3″ setup. The characteristic of the run-to-run reproducibility for the 6×100mm setup will be discussed. To demonstrate the suitability of the reactor for device production results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3″, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

Keywords

epitaxychemical vapor deposition (CVD) (deposition)chemical vapor deposition (CVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D04-04
Copyright
Copyright © Materials Research Society 2008

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References

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