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Sub-Nanometric Resolution Depth Profiling of Ultrathin Ono Structures

Published online by Cambridge University Press:  10 February 2011

C. Radtke ,
T.D.M. Salgado ,
C. Krug ,
J. de Andrade  and
I.J.R. Baumvol
C. Radtke
Affiliation:
Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 - Porto Alegre - RS - Brazil - 91509-900
T.D.M. Salgado
Affiliation:
Instituto de Química, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 - Porto Alegre - RS - Brazil - 91509-900
C. Krug
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 - Porto Alegre - RS - Brazil - 91509-900
J. de Andrade
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 - Porto Alegre - RS - Brazil - 91509-900
I.J.R. Baumvol
Affiliation:
Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves, 9500 - Porto Alegre - RS - Brazil - 91509-900
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Abstract

Ultrathin silicon oxide/nitride/oxide films on silicon prepared by the usual route -thermal growth of an oxide followed by deposition of a nitride layer by chemical vapor deposition, and finally a reoxidation step - were characterized using isotopic substitution of N and O and depth profiling with sub-nanometric resolution. The redistribution of N and O during the oxide/nitride/oxide film processing was investigated by: i) 15N and 18O depth profiling by means of narrow nuclear resonance, and ii) 16O profiling using step-by-step chemical dissolution associated with areal densities determinations by nuclear reaction analysis. It was observed that the reoxidation step, here performed varying temperature and time, induces atomic transport of O and N thus resulting in oxide/nitride/oxide structures which are not stacked layered ones, but rather silicon oxynitride ultrathin films, in which the N concentration presents a maximum in the bulk and is moderate in the near-surface and near-interface regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 537
Copyright
Copyright © Materials Research Society 1999

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References

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