Hostname: page-component-669899f699-qzcqf Total loading time: 0 Render date: 2025-04-29T13:45:40.766Z Has data issue: false hasContentIssue false
  • English
  • Français

Submicron Pattern Delineation Using a Pulsed Electron-Beam in Soft Vacuum

Published online by Cambridge University Press:  25 February 2011

Jayaraxn Krishnaswamy ,
Lumin Li ,
G. J. Collins  and
H. Hiraoka
Jayaraxn Krishnaswamy
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
Lumin Li
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
H. Hiraoka
Affiliation:
IBM Research, Almaden Research Center, San Jose, CA 95120-6099
Get access

Abstract

We describe herein an electron-beam, proximity lithograghic process which operates in soft vacuum (50 mT< p <1 Torr) using highly directed electron emission from a cold cathode. The electron-beam operates with large areas(<10 cm2) and with large total currents (Ipeak< 100A). Using this soft vacuum beam we could replicate feature sizes of ∼0.5 μm on∼3 μm thick PMMA, with a resist layer to stencil mask spacing of 25 to 30 μm. While resist exposed in a helium background showed vertical wall profiles (developed thickness ∼3 ¼m), resists exposed in air showed sloped walls (∼ 60°). Resist behavior also appears to be dependent on the number of pulses used for exposure ranging from simple exposure ( 1 to 5 pulses) to self-development ( >25 pulses).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 91
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Herriot, D. R., Collier, R. L., Alles, D. A. and Stafford, J. W., IEEE Trans. Electron Devices, Vol. ED-22(7), 385 (1975).Google Scholar
2. Ward, R., Franklin, A. R., Gould, P. and Plummer, M. J., J. Vac. Sci. Technol., 19(4), 966 (1982).CrossRefGoogle Scholar
3. Bohlen, H., Gerschner, J., Keyser, J., Kulcke, W. and Nehmitz, P., IBM J. Res. Develp., 26(5), 568 (1982).Google Scholar
4. For references, see Srinivasan, R., J. Vac. Sci. Technol B1(4), 923 (1983); for more recent works, see H. Masuhara, H. Hiraoka and K. Domen, Macromolecules, to appear in February issue of 1987, and references cited therein.CrossRefGoogle Scholar
5. Krishnaswamy, J. and Collins, G. J., U. S. Patent Appld. (1985).Google Scholar
6. Krishnaswamy, J., Li, L. and Collins, G. J., Colorado Microelectronics Conference, CMC-86, Colorado Springs, March 24–25 (1986).Google Scholar
7. Geiss, M. W., Randall, J. N., Deutsch, T. F., Graff, P. D., Krohn, K. E. and Stern, L. A., Applied Phys. Lett. 43(1), 74 (1983).Google Scholar
8. Krishnaswamy, J., Li, L., Collins, G. J. and Hiraoka, H., AMI, Industry-University Advanced Materials Conference, Denver, CO., Feb. 25–27 (1987).Google Scholar
9. See also Hiraoka, H., U. S. Patent 4,119,688 (January 1979).Google Scholar