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Submicron Highly Doped Silicon Epitaxial Layers Grown by Lpvpe

Published online by Cambridge University Press:  28 February 2011

L. Vescan ,
H. Beneking  and
O. Meyer
L. Vescan
Affiliation:
Institute of Semiconductor Electronics, Aachen University of Technology, Sommerfeldstr.,D—5100 Aachen, FRG
H. Beneking
Affiliation:
Institute of Semiconductor Electronics, Aachen University of Technology, Sommerfeldstr.,D—5100 Aachen, FRG
O. Meyer
Affiliation:
*Kernforschungszentrum Karlsruhe, INFP, D—7500 Karlsruhe, FRG
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Abstract

By low pressure vapour phase epitaxy (LPVPE) epitaxial growth down to 760ºC has been achieved in the SiC12H2/H2 system, as revealed by RBS and channeling measurements ( min ∼4.0%). High and relative homogeneous doping was obtained with boron resp. phosphorus in the range 1x1018 -5x1019 cm-3 for T: 800º - 900ºC. Sharp transitions in the boron doping profile to the substrate, of the order of 15mn, result only for temperatures much lower than 850ºC. Schottky barrier enhanced diodes with promising performances were formed with Ti evaporated on p+n layers grown selectively on n+ substrates.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 133
Copyright
Copyright © Materials Research Society 1986

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