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Subboundary Spacing and Appearance in Laser Zone-Melting Recrystallization of Silicon Onamorphous Substrate

Published online by Cambridge University Press:  25 February 2011

J.P. Joly ,
J.M. Hode  and
J.C. Castagna
J.P. Joly
Affiliation:
L.E.T.I. -C.E.A. -I.R.D.I. -Commissariat A lEnergie AtomiqueLETI -CENG -85 X -38041 Grenoble Cedex -FRANCE
J.M. Hode
Affiliation:
L.E.T.I. -C.E.A. -I.R.D.I. -Commissariat A lEnergie AtomiqueLETI -CENG -85 X -38041 Grenoble Cedex -FRANCE
J.C. Castagna
Affiliation:
L.E.T.I. -C.E.A. -I.R.D.I. -Commissariat A lEnergie AtomiqueLETI -CENG -85 X -38041 Grenoble Cedex -FRANCE
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Abstract

Recrystallized silicon films on amorphous substrates are mainly characterized by subgrain boundaries separated by a few microns. Using seedina from the silicon substrate (lateral epitaxy), subboundary free areas adjacent to the seed are achieved in the direction of the beam scanninq. We have demonstrated the large influence of the growth direction and of the thickness of the silicon layer together on the incubation distance and on the spacing of the subboundaries. Surprisingly, a variation of the arowth (scan) velocity of two orders of magnitude (from 1 to 70 cm/s) has no noticeable influence on these narameters. A I × 10 elliptical Ar+ laser beam has been used in these experiments. An interpretation of these results in terms of lateral (step) growth and stress will be given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 599
Copyright
Copyright © Materials Research Society 1985

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References

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