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Published online by Cambridge University Press: 17 March 2011
Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm−1, deposition rate of 9.64 Å/s and SEM grain size of ∼3000 Å.