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Study on the Polycrystalline Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

Byeong Y. Moon ,
Jae H. Youn ,
Sung H. Won ,
Jin Jang  and
Stanislaw M. Pietruszko
Byeong Y. Moon
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Jae H. Youn
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Sung H. Won
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Jin Jang
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Stanislaw M. Pietruszko
Affiliation:
Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, IMiO PW, ul. Koszykowa 75, 00-662 Warsaw, Poland
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Abstract

Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm−1, deposition rate of 9.64 Å/s and SEM grain size of ∼3000 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.2.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Kato, T., IEEE. Trans. ED. 35, 923 (1988).Google Scholar
2. Inversion, R. B. andRief, R., J. Appl. Phys. 62, 1675 (1987).Google Scholar
3. Sameshima, T., Hara, M. and Usui, S., Jpn. J. Appl. Phys. 28, 1789 (1989).Google Scholar
4. Schaber, H., Cutter, D., Binder, J. and Obermeier, E., J. Appl. Phys. 54, 4633 (1993).Google Scholar
5. Lim, H.J., Ryu, B.Y., Ryu, J.I. and Jang, J., Thin Solid Films 289, 227 (1996).Google Scholar
6. Yokota, K., J. Appl. Phys. 72(3), 1188 (1992).Google Scholar
7. Matsumura, M. and Sugiura, O., Mat. Res. Soc. Symp. Proc. 297, 109 (1993).Google Scholar
8. Ra, Y., Bradely, S. G. and Chen, C.H., J. Vac. Sci. Technol. A 12(4), 1328 (1994).Google Scholar
9. He, Y., Yin, C., Cheng, G., Wang, L. and Liu, X., J. Appl. Phys. 75(2), 797 (1994).Google Scholar
10. Youn, J.H., Lim, S.H., Moon, B.Y. and Jang, J., J. Kor. Phys. Soc. 35, S1017 (1999).Google Scholar