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Study on the Photoconductive Effect from a P/N Junction Structure Incorporated with Porous Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p/n junction, which could make the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion-implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct features on current-voltage (I-V) curves has been observed.
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- Copyright © Materials Research Society 1993