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Study on the Photoconductive Effect from a P/N Junction Structure Incorporated with Porous Silicon

Published online by Cambridge University Press:  28 February 2011

C. C. Yeh
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
Klaus Y.J. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
P. C. Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, ROC
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Abstract

We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p/n junction, which could make the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion-implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct features on current-voltage (I-V) curves has been observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1]. Canham, L.T., Appl. Phys. Lett., 57, 1046, (1990).Google Scholar
[2]. Bilenko, D.I., Aban'shin, N.P., Galishnikova, Yu. N., Markelova, G.E., Mysenko, I.B., and Khasina, E.I., Sov. Phys. Semicond., 17, 1336, (1983).Google Scholar
[3]. Beale, M.I.J., Benjamin, J.D., Uren, M.j., Chew, N.G., and Cullis, A.G., J. Crystal Growth, 73, 622, (1985).Google Scholar
[4]. Anderson, R.C., Muller, R.S., and Tobias, C.W., J. Electrochem. Soc. 138, 3406, (1991).Google Scholar
[5]. Koshida, N. and Koyama, H., Appl. Phys. Lett., 60, 347, (1992).Google Scholar
[6]. Namaver, F., Maruska, H.P., and Kalkhoran, N.M., Appl. Phys. Lett., 60, 2514, (1992).Google Scholar