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A Study of V3+/4+ Levels in Semi-insulating 6H-SiC using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies

Published online by Cambridge University Press:  01 February 2011

Wonwoo Lee  and
Mary E Zvanut
Wonwoo Lee
Affiliation:
[email protected], University of Alabama at Birmingham, Materials Science and Engineering, 1530 3rd Ave S., Birmingham, 35294, United States
Mary E Zvanut
Affiliation:
[email protected], University of Alabama at Birmingham, Birmingham, 35294, United States
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Abstract

The purpose of this study is to identify the vanadium acceptor levels in semi-insulating (SI) 6H-SiC using optical admittance spectroscopy (OAS) and electron paramagnetic resonance (EPR) spectroscopy. OAS conductance peaks near at 0.67 ± 0.02 eV and 0.70 ± 0.02 eV are identified as V3+/4+ levels at the quasi-cubic sites. An OAS peak at 0.87 eV is assigned to the same transition at the hexagonal site. EPR measurements before illumination revealed the characteristic spectrum of V3+. The presence of the V3+ signal supports the identification of the OAS peaks as transitions from the V3+/4+ level to the conduction band. Photo-induced EPR measurements reveal a change in the intensity of V3+ and V4+ at 0.8 ± 0.1 eV, where the amplitude of the V3+ charge state decreases and that of V4+ increases by approximately equal amounts. Although the individual sites are not resolved in the photo-induced EPR data, the 0.8 eV feature strongly supports the assignment of the three OAS peaks as acceptor levels.

Keywords

actinideelectron spin resonancedeep level transient spectroscopy (DLTS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B06-05
Copyright
Copyright © Materials Research Society 2006

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