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Study of Thermal Oxide Solid-State Reaction on GaAs Surfaces

Published online by Cambridge University Press:  25 February 2011

Z. Lu ,
D. Chen ,
R. M. Osgood Jr  and
D. V. Podlesnik
Z. Lu
Affiliation:
Microelectronics Sciences Laboratory, Columbia University, New York, NY 10027
D. Chen
Affiliation:
Microelectronics Sciences Laboratory, Columbia University, New York, NY 10027
R. M. Osgood Jr
Affiliation:
Microelectronics Sciences Laboratory, Columbia University, New York, NY 10027
D. V. Podlesnik
Affiliation:
IBM General Technology Division, Hopewell Junction, NY 12533
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Abstract

In this paper, we will present a study of the thermal reaction of AsjOs with GaAs at temperatures below 550°C using monochromatic X-ray photoelectron spectroscopy (MXPS). A solid-state interface reaction of 4GaAs + 3AS2O5 → 2Ga2O3 + 3AS2O3 + 4As, which includes the usual native oxide thermal reaction: 2GaAs + AS2O3 → Ga2O3 + 4As, as well as a decomposition reaction AS2O5 → AS2O3 + O2 is responsible for the thermal reaction in this temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 263
Copyright
Copyright © Materials Research Society 1992

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References

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