Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T08:20:45.799Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of the Structure, Electrophysical Properties of Thin Oxide Semiconductor Films on the Basis of SiO2, Cr2O3 and V2O5 Oxides

Published online by Cambridge University Press:  02 September 2015

Sergey Karabanov ,
Andrey Karabanov ,
Dmitriy V. Suvorov ,
Gennady Gololobov  and
Evgeny Slivkin
Sergey Karabanov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarina Str., Ryazan 390005, Russia
Andrey Karabanov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarina Str., Ryazan 390005, Russia
Dmitriy V. Suvorov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarina Str., Ryazan 390005, Russia
Gennady Gololobov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarina Str., Ryazan 390005, Russia
Evgeny Slivkin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarina Str., Ryazan 390005, Russia
Get access

Abstract

The paper presents complex research of the structure and electrophysical properties of thin films on the basis of Cr2O3, V2O5 and SiO2 oxides compounds. The paper studies binary compounds films of Cr2O3 -V2O5 and Cr2O3 - V2O5 -SiO2 films. The method of electron-beam evaporation is used for the films deposition; glass is used as the substrate. The films structure is studied by the methods of slow electron diffraction, infrared spectroscopy, and electron paramagnetic resonance. The films composition is determined by the X-ray microanalysis.

In the course of studies the following regularities have been established:

- dependence of the films structure on their composition;

- dependence of electrophysical films properties on the their composition;

- dependence of volt-ampere characteristics on the films composition (memory effect);

- high film stability to the effect of electron flow and radiation in the discharge plasma.

Keywords

thin filmoxidememory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2133242
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lazarev, V.B., Krasnov, V.G and Shalygin, I.S., “Electrical Conductivity of Oxide Systems and Film Structures”, Moscow, Science, 1979.Google Scholar
Kofstad, P., “Stoichiometric Deviations, Diffusion, Electrical Conductivity in Simple Metal Oxides”, Moscow, Mir, 1975.Google Scholar
Crawford, J.A. and Vest, R.W., “Electrical Conductivity of Single-Crystal Сr2О3”, J. Applied Physics, 1964, v. 35, pp. 2413–2418.CrossRefGoogle Scholar
Park, K.S. and Weitzman, E.J., “Electron-beam Evaporation of Gasses”, IBM, J. Research & Development, 1978, v. 22, No. 6, pp. 607–612 Google Scholar
Nakomoto, K., “Infrared Spectra of Inorganic and Coordination Compounds”, Moscow, Mir, 1966 Google Scholar
Samsonov, G.V., Physicochemical Properties of Oxides, Handbook, Moscow, Metallurgy, 1978 Google Scholar