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The Study of the Optoelectronic Properties of a-SiGe:H Photodiodes

Published online by Cambridge University Press:  21 February 2011

L. C. Kuo ,
C. C. Lee ,
K. H. Chen ,
Y. K. Fang  and
C. H. Yu
L. C. Kuo
Affiliation:
Materials Research Laboratories, Thin Film Technology Laboratory, Industrial Technology Research Institute
C. C. Lee
Affiliation:
National Chen Kung University, Department of Electrical Engineering
K. H. Chen
Affiliation:
National Chen Kung University, Department of Electrical Engineering
Y. K. Fang
Affiliation:
National Chen Kung University, Department of Electrical Engineering
C. H. Yu
Affiliation:
Materials Research Laboratories, Thin Film Technology Laboratory, Industrial Technology Research Institute
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Abstract

We have studied the spectrum of various types of a-SiGe:H alloys for pin and Schottky barrier photodlodes, in which the band gaps of the a-SiGe:H vary between 1.75 eV and 1.35 eV. It has been found that the spectral re-ponse of the Schottky barrier diode shifts significantly to longer wavelength and the quantum efficiency decreases with an increase in i layer thickness. However, for the pin diode, an increase in the i layer thickness can hardly shift the spectrum to longer wavelength. For both pin and Schottky barrier diodes, the quantum efficiency can be increased by increasing the reverse bias. Therefore, an enhanced spectrum with a maximum at 800nm and a tail to lun can be achieved for a reverse-biased a-SiGe:H Schottky barrier diode. The results indicate that a-SiGe:H has a great potential for a low cost infrared photodetector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 481
Copyright
Copyright © Materials Research Society 1991

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References

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