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Study of SiH4-based PECVD Low-k Carbon-doped Silicon Oxide

Published online by Cambridge University Press:  17 March 2011

Hongning Yang ,
Douglas J. Tweet ,
Lisa H. Stecker ,
Wei Pan ,
David R. Evans  and
S.-T. Hsu
Hongning Yang
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
Douglas J. Tweet
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
Lisa H. Stecker
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
Wei Pan
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
David R. Evans
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
S.-T. Hsu
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
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Abstract

In previous studies, low-k carbon-doped silicon oxide (SiOC) films were deposited using organosilicon precursor: (CH3)xSiH4−x. In this paper, we present the properties of PECVD low-k SiOC films produced by using conventional SiH4 based gas precursors. The SiH4 based SiOC films have similar gross physical and electrical characteristics to those of (CH3)xSiH4−x based SiOC. Since the precursors are inexpensive, commercially available and convenient to operate for existing tools, the process should not require additional cost as compared with that of PECVD silicon dioxide. We demonstrate the feasibility of integrating Cu with SiOC on damascene interconnection. The evaluation on electrical performance of the Cu/SiOC based damascene structure will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D3.3.1
Copyright
Copyright © Materials Research Society 2000

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