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Study of SiF4-N2-H2 Plasmas for the Deposition of Fluorinated Silicon Nitride Films
Published online by Cambridge University Press: 22 February 2011
Abstract
Radiofrequency glow discharges, operating under various conditions, have been used to deposit hydrogenated and fluorinated silicon nitride (a-Si,N:H,F) from SiF4-N2-H2 gas mixtures. The effect of the feeding mixture composition has been investigated in order to establish the optimum deposition conditions for stable silicon nitride. High H2-dilution of the feeding mixture has been found to produce transparent (Eg>5.6eV) and stoichiometric (N/Si=1.3) films.
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- Copyright © Materials Research Society 1993
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