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The Study of Optical and Electrical Properties of a-SiC:H for Multi-junction Si Thin Film Solar Cell

Published online by Cambridge University Press:  01 February 2011

Jenny H. Shim ,
W.K. Yoon ,
S.T. Hwang ,
S.W. Ahn  and
H.M. Lee
Jenny H. Shim
Affiliation:
[email protected], LG Electronics, Seoul, Korea, Republic of
W.K. Yoon
Affiliation:
[email protected], LG Electronics, Seoul, Korea, Republic of
S.T. Hwang
Affiliation:
[email protected], LG Electronics, Seoul, Korea, Republic of
S.W. Ahn
Affiliation:
[email protected], LG Electronics, Seoul, Korea, Republic of
H.M. Lee
Affiliation:
[email protected], LG Electronics, Seoul, Korea, Republic of
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Abstract

Studies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.

Keywords

infrared (IR) spectroscopyplasma-enhanced CVD (PECVD) (deposition)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A07-11
Copyright
Copyright © Materials Research Society 2010

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