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Study of GaN Light-Emitting Diodes Obtained by Laser-Assisted Debonding

Published online by Cambridge University Press:  01 February 2011

C. P. Chan ,
T. M. Yue ,
C. Surya ,
A. M. C. Ng ,
A. B. Djurišić ,
C. K. Liu  and
M. Li
C. P. Chan
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of EIE, Room EF501A,Department of EIE, The Hong Kong Polytechnic University,, Kowloon, HongKong, Hong Kong, Nil, Nil, Hong Kong, (852) 9601 3737, Nil
T. M. Yue
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of Industrial and Systems Engineering, Advanced Manufacturing Technology Research Center, Hong Kong
C. Surya
Affiliation:
[email protected], The Hong Kong Polytechnic University, Department of Electronic and Information Engineering and Photonics Research Centre, Hong Kong
A. M. C. Ng
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong
A. B. Djurišić
Affiliation:
[email protected], The University of Hong Kong, Department of Physics, Hong Kong
C. K. Liu
Affiliation:
[email protected], ASM Pacific Technology Limited
M. Li
Affiliation:
[email protected], ASM Pacific Technology Limited, Hong Kong
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Abstract

We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The device was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the debonded surface. The luminous intensity of the debonded and roughened LEDs increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.

Keywords

laserchemical vapor deposition (CVD) (deposition)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF12-09
Copyright
Copyright © Materials Research Society 2006

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References

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