Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-03T02:18:18.985Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of Epitaxial CoSi2 Grown on (100)Si

Published online by Cambridge University Press:  25 February 2011

M. Lawrence ,
A. Dass ,
David M. Fraser  and
Chih-Shih Wei
M. Lawrence
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
A. Dass
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
David M. Fraser
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
Chih-Shih Wei
Affiliation:
Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95052.
Get access

Abstract

A bilayer of CoSi2 covered with TiN on (100)Si has been processed in a nonvacuum environment using a (100)Si wafer deposited with a thin film bilayer of Ti under Co. The Si/CoSi2/TiN stack has been studied using transmission electron microscopy, Rutherfor Backscattering Spectrometry and Auger Electron Spectroscopy. Cross section TEM and RBS studies showed that CoSi2 film is a single crystal and epitaxial with (100)Si. Ledges parallel to (111)Si were also observed at the (100)Si/CoSi2 interface, which was mostly planar. The orientation relationship at Si/CoSi2 interiace, microstructural characteristics of CoSi2 and TiN and the mechanism of 2the reaction are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 193
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.See for example, Murarka, S.P., ‘Silicides for VLSI Applications’, Academic Press, Inc., (1983).Google Scholar
2. Tung, R.T., Levi, A.F.J., Schrey, F. and Anzlower, M. in ‘Evaluation of Advanced Semiconductor Materials by Electron Microscopy’ edited by Cherns, David, NATO ASI Series. Series B: Physics Vol. 203, Plenum Press, New York and London. (1989) pp 167–181.CrossRefGoogle Scholar
3. White, Alice E., Short, K.T., Eaglesham, D.J., Hull, R., Dynes, R.C., Berger, S.D., Higgins, H.A., and Loretto, D., in ‘Ion Implantation and Dielectrics for Elemental and Compound Semiconductors’ Edited by Pearson, S.J., Jones, K.S. and Kapoor, V.J., Electrochemical Society Inc., Procd. Vol. 90–13 (1990) pp 162–173.Google Scholar
4. Bulle-Lieuwma, C.W.T., Jong, A.F. de and Vandenhoudt, D.E.W., in Procds. of the XII International Congress for Electron Microscopy, Volume 4, Edited by Peachey, L.D. and Williams, D.B. (1990) pp 344–345.Google Scholar
5. Wei, Chih-Shih, Raghavan, Gopal, Lawrence, M. Dass, A., Frost, Mike, Brat, Teodoro and Fraser, David B. in VI Intl. IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA 241 (1989).Google Scholar
6. Lawrence, M. Dass, A., fraser, David B. and Wei, Chih-Shih, Appl. Phys. Lett. 58(12) (1991) pp. 1308–1310.Google Scholar
7. Wei, Chih-Shih, Fraser, David B., Lawrence, M. Dass, A. and Brat, Teodoro in VII Intl. IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA 233 (1990).Google Scholar
8. Yalisove, M., Tung, R.T. and Loretto, D., J. Vac. Sci. Technol. A7 (3) (1989) pp. 1472–1474.Google Scholar
9. Porter, D.A. and Easterling, K.E., ‘Phase Transformations in Metals and Alloys’. Van Nostrand Reinhold (UK) Co. Ltd. 110 (1981).Google Scholar
10. Chen, L.J., Mayer, J.W., Tu, K.N., Sheng, T.T., Thin Solid films, 93, 91 (1982).Google Scholar