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Study of Enhanced Solid Phase Epitaxy of Amorphous Silicon with Low Concentrations of Implanted Phosphorous

Published online by Cambridge University Press:  25 February 2011

Young- Jin Jeon ,
Won Woo Park ,
M. F. Becker  and
Rodger. M. Walser
Young- Jin Jeon
Affiliation:
Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A.
Won Woo Park
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A.
M. F. Becker
Affiliation:
Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A. Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A.
Rodger. M. Walser
Affiliation:
Center for Materials Science and Engineering, The University of Texas, Austin, TX 78712, U.S.A. Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, U.S.A. J. H. Herring Centennial Professor in Engineering
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Abstract

In this work we measured the functional dependence of the solid phase epitaxial (SPE) regrowth of amorphous silicon on the implanted phosphorous concentration, Np. The growth rates of self-ion amorphized layers in silicon wafers with (100) substrate orientation were measured by in situ, high precision, isothermal cw laser interferometry for temperatures from 460°C to 590°C, and concentrations in the range 2x1017 cm-3<Np<4x1020 cm-3. For low impurity concentrations, the fractional increase in the intrinsic SPE growth velocity ΔV/Vi depended linearly on Np as previously established for boron. For a given impurity concentration, the relative change V/Vi decreased with increasing annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 551
Copyright
Copyright © Materials Research Society 1989

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References

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