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Study of doping in GaAs layers by local probe techniques: micro-Raman, micro-photoluminescence and cathodoluminescence

Published online by Cambridge University Press:  11 February 2011

Angel M. Ardila
Affiliation:
Depto. de Física, Facultad de Ciencias, Universidad Nacional de Colombia, Ciudad, Universitaria, Santa Fede Bogotá, Colombia Física de la Materia Condensada E.T.S.I.I., Universidad de Valladolid, Valladolid, 47011, Spain
O. Martínez
Affiliation:
Física de la Materia Condensada E.T.S.I.I., Universidad de Valladolid, Valladolid, 47011, Spain
M. Avella
Affiliation:
Física de la Materia Condensada E.T.S.I.I., Universidad de Valladolid, Valladolid, 47011, Spain
Luis F. Sanz
Affiliation:
Física de la Materia Condensada E.T.S.I.I., Universidad de Valladolid, Valladolid, 47011, Spain
J. Jiménez
Affiliation:
Física de la Materia Condensada E.T.S.I.I., Universidad de Valladolid, Valladolid, 47011, Spain
B. Gérard
Affiliation:
THALES, Corporate Research Laboratory, 91404 Orsay Cedex, France
J. Napierala
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 Aubiére Cedex, France
E. Gil-Lafon
Affiliation:
LASMEA UMR CNRS 6602, Université Blaise Pascal, Les Cézeaux, 63177 Aubiére Cedex, France
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Abstract

The free carrier concentration of GaAs layers grown by MOCVD either on GaAs or Si substrates, by the conformal method in the last case, was obtained from the micro-Raman spectra using the hydrodynamic approach to fit the LO phonon-plasmon coupled Raman modes. The results on homoepitaxial layers were used as a calibration of the fitting method. The measurements in the selectively doped conformal layers were then compared with data obtained by micro-photoluminescence and cathodoluminescence spectroscopy and imaging. The doping data are compared with those deduced from the room temperature micro-photoluminescence and cathodolumiescence spectra.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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