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Study and Optimization of Silicon-CVD Diamond Interface for SOD Applications

Published online by Cambridge University Press:  31 January 2011

Jean-Paul Mazellier
Affiliation:
[email protected], CEA, LETI, MINATEC, Innovative Devices Laboratory, Grenoble, France
Jean-Charles Arnault
Affiliation:
[email protected], CEA, -LIST, Diamond Sensors Laboratory, Grenoble, France
Mathieu Lions
Affiliation:
[email protected], CEA, -LIST, Diamond Sensors Laboratory, Grenoble, France
François Andrieu
Affiliation:
[email protected], CEA, LETI, MINATEC, Innovative Devices Laboratory, Grenoble, France
Robert Truche
Affiliation:
[email protected], CEA, LETI, MINATEC, Innovative Devices Laboratory, Grenoble, France
Bernard Previtali
Affiliation:
[email protected], CEA, LETI, MINATEC, Innovative Devices Laboratory, Grenoble, France
Samuel Saada
Affiliation:
[email protected], CEA, -LIST, Diamond Sensors Laboratory, Grenoble, France
Philippe Bergonzo
Affiliation:
[email protected], CEA, LIST, Gif-sur-Yvette, France
Simon Deleonibus
Affiliation:
[email protected], CEA-LETI, MINATEC,, 17 rue des Martyrs, Grenoble, 38054, France
Sorin Cristoloveanu
Affiliation:
[email protected], IMEP-LAHC MINATEC, Grenoble, France
Olivier Faynot
Affiliation:
[email protected], CEA, LETI, MINATEC, Innovative Devices Laboratory, Grenoble, France
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Abstract

With respect to Silicon-on-Diamond approaches as an alternative to SOI where diamond is used as the buried dielectric, we have in recent works demonstrated the feasibility of a novel approaches where the CVD diamond layer is grown on silicon using Bias Enhanced Nucleation (BEN) over large area substrates, then smoothed and assembled to successfully enable the fabrication of first prototypes of silicon-on-diamond substrates. The key novelty to those SOD substrates were that only a very thin box dielectric diamond layer is used (typically from 150 to 500nm thick), as required by the current SOI technology. However we had also observed that the silicon-diamond interface quality to be sensitive to the nature of the nucleation interface. Thus the current contribution here studies the chemical nature of various capping materials used to solve the issue of electrical defects in case of direct silicon-diamond interface and at the same time to enable the whole system to benefit from the high thermal conductivity of diamond when compared to other standard electrical insulating materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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