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Studies on Carrier Transport Through a-Si:H/a-Si1−xCxH Quantum Well Structures Imbedded in the i Layer of a p-i-n Structure

Published online by Cambridge University Press:  25 February 2011

Y. L. Jiang ,
H. L. Hwang  and
M. S. Feng
Y. L. Jiang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University
M. S. Feng
Affiliation:
Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30043, Taiwan, Republic of China
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Abstract

a-Si:H/a-Si1−XCX:H single and double barrier structures imbedded at different locations of the i layer of a p-i-n structure were used to study the carrier transport properties of amorphous QW. The shapes of the observed I-V curves of both structures are similar. The bound states of the well layer of double barrier structures do not play a role in the carrier tunneling process. The resonant tunneling time is larger than the inelastic scattering time by 5 to 12 orders of magnitude. When the tunneling process of amorphous QW is in the completely incoherent tunneling regime, the peak-to-valley ratio of NDR and the density of states in the well go to zero. From the analysis of I-V characteristics of both structures under different monochromatic light illumination, the observed current dips are due to the collection of photogenerated carriers in two regions of the i layer separated by the imbedded barrier structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 335
Copyright
Copyright © Materials Research Society 1990

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References

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