Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-27T15:32:59.991Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure and Carrier-Transport in a-Si:H, a-Si(Ge): H Films Prepared by Chemical Annealing

Published online by Cambridge University Press:  21 February 2011

Hajime Shirai ,
Kenjiro Nakamura ,
Masanobu Azuma ,
Jun-ichi Hanna  and
Isamu Shimizu
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Kenjiro Nakamura
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Masanobu Azuma
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Jun-ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Get access

Abstract

The stability and opto-electric properties of a-Si:H films fabricated by “chemical annealing (CA)” with excited states of He (He*) were systematically investigated. The films made by the CA mode showed a high photoconductivity due to a low level of defect density, 2×1015cm-3, and improvement in the stability against light soaking. A marked improvement was also found in the hole-transport in films fabricated by the CA. The structural relaxation on the growing surface was also enhanced by addition of a small amount of Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Das, D., Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys., 30 (1991) L239 CrossRefGoogle Scholar
[2] Shirai, H., Das, D., Hanna, J. and Shimizu, I., Appl. Phys. Lett., 59 (1991) 1096 Google Scholar
[3] Shirai, H., Ariyoshi, T., Hanna, J. and Shimizu, I., J. Non-cryst. Solids, 137&138 (1991) 693 Google Scholar
[4] Mahan, A.H., Carapella, J., Nelson, B.P., Crandall, R.S. and Balberg, I., J. Appl. Phys 69 (1991) 6728 CrossRefGoogle Scholar
[5] Ganguly, G. and Matsuda, A., Tech. Digest of the 3rd Sunshine Workshop (Yokohama, 1991) pp51 Google Scholar
[6] Mahan, A. and Vanecek, M., Tech. Digest of the 3rd Sunshine Workshop (Yokohama, 1991) pp3 Google Scholar
[7] Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys., 30 (1991) L881 Google Scholar
[8] Shirai, H., Nakamura, K., Hanna, J. and Shimizu, I., J. Non-cryst. Solids, 137&138 (1991) 653 CrossRefGoogle Scholar
[9] Ritter, D., Waiser, K. and Zeldov, E., J. Appl. Phys., 62 (1987) 4563 Google Scholar
[10] Meyer, W. and Neldel, H., Z. Tech. Phys., 12 (1937) 588 Google Scholar
[11] Shibata, N., Oda, S., and Shimizu, I., Jpn. J. Appl. Phys., 26 (1987) L276 Google Scholar
[12] Meaudre, R., Meaudre, M., Roca i Cabairocas, P., Tanidi, S., Bouizen, Y. and Theye, M.L., J. Non-cryst. Sotids, 137&138 (1991) 171 CrossRefGoogle Scholar