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Published online by Cambridge University Press: 01 February 2011
Cd1-xMnxTe alloy films with band gaps of 1.6 ∼ 1.8 eV have been deposited by RF magnetron sputtering for solar-cell applications. The films have been treated by chloride vapors to improve the photovoltaic performance. These as-deposited and chloride-treated CdMnTe films have been investigated by Raman spectroscopy, x-ray diffraction (XRD) and scanning electron microscopy (SEM). Raman results indicate that Te and/or TeO2 exists in the annealed samples depending on anneal conditions.