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Structural Stability of Amorphous Semiconductor Superlattices

Published online by Cambridge University Press:  28 February 2011

P. D. Persans ,
A. F. Ruppert ,
B. Abeles ,
Y. J. Wu ,
V. Pantojas ,
K. S. Liang  and
G. Hughes
P. D. Persans
Affiliation:
Rensselaer Polytechnic Institute, Physics Department and Center for Integrated Electronics, Troy, NY 12180-3590
A. F. Ruppert
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
B. Abeles
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
Y. J. Wu
Affiliation:
Rensselaer Polytechnic Institute, Physics Department and Center for Integrated Electronics, Troy, NY 12180-3590
V. Pantojas
Affiliation:
Rensselaer Polytechnic Institute, Physics Department and Center for Integrated Electronics, Troy, NY 12180-3590
K. S. Liang
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
G. Hughes
Affiliation:
Exxon Research and Engineering Co., Annandale, NJ 08801
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Abstract

We report recent results of studies of the structure and thermal stability of periodic multilayers based on hydrogenated amorphous silicon, hydrogenated amorphous germanium, silicon nitride and silicon oxide. By varying the sublayer thickness from 1 nm to 20 nm it is possible to extract information on the range and magnitude of relaxation and interdiffusion in these metastable materials. It is also possible to gain information on the influence of interfaces on crystallization and relaxation. The principal techniques discussed here are Raman scattering, optical absorption and high resolution x-ray reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 547
Copyright
Copyright © Materials Research Society 1990

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