Published online by Cambridge University Press: 15 February 2011
The state of relaxation of amorphous Ge films has been modified upon melting and rapid solification induced by irradiation with ps laser pulses. The material obtained upon irradiation with fluences sligthly above the melting threshold is less relaxed than the as-deposited one (de-relaxation process). For larger fluences the results obtained suggest that the degree of relaxation is related to the supercooling achieved prior solidification.