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Structural Nature of Nanocrystalline Silicon

Published online by Cambridge University Press:  01 January 1993

Weiqiang Han ,
Gaorong Han ,
Jianmin Qiao ,
Piyi Du ,
Zhishang Ding ,
Jing Xu  and
Zhijian Shen
Weiqiang Han
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Gaorong Han
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Jianmin Qiao
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Piyi Du
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Zhishang Ding
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Jing Xu
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
Zhijian Shen
Affiliation:
Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
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Abstract

Nanocrystalline silicon (nc-Si:H) films with an average grain size ranging between 2 and 10 nm are prepared in a modified plasma chemical vapor deposition system. X-ray diffraction, transmission electron diffraction, and high resolution electron microscope are used to elucidate the structural nature in the deposited nc-Si:H films. The lattice network of the deposited silicon films changes from disordered structure to ordered structure with the increasing of plasma energy. The results also show that the crystal lattice of the nc-Si:H film is distorted from those of microcrystalline silicon and crystalline silicon. In the observed x-ray diffraction, there are two anomalous peaks at 2θ = 29.5° and 32.5° of Si besides the normal peaks at 2θ = 28.5° of Si(111) and 2θ = 47.3°of Si(220). By the high resolution electron microscopy study, a new crystallography structure with distorted Si(111) crystallites in nc- Si:H films is found. Based on our results, a structure model of nc-Si:H films is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 381
Copyright
Copyright © Materials Research Society 1993

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References

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