Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-28T20:46:07.821Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Inhomogeneities and Resistivity in Radiation Damaged LA2/3(CA,SR)1/3MNO3-δ Pulsed Laser Deposited Thin Films

Published online by Cambridge University Press:  15 February 2011

R. M. Stroud ,
V. M. Browning ,
J. M. Byers ,
D. B. Chrisey ,
W. W. Fuller-Mora ,
K. S. Grabowski ,
J. S. Horwitz ,
J. Kim ,
D. L. Knies  and
M. S. Osofsky
R. M. Stroud
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
V. M. Browning
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
J. M. Byers
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
D. B. Chrisey
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
W. W. Fuller-Mora
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
K. S. Grabowski
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
J. S. Horwitz
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
J. Kim
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
D. L. Knies
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
M. S. Osofsky
Affiliation:
Naval Research Lab., 4555 Overlook Ave. SW, Washington, DC 20375
Get access

Abstract

The relationship between structural distortions and resistivity in pulsed laser deposited La2/3Ca1/3MnO3 (LCMO) and La2/3Ca1/3MnO3 (LSMO) thin films was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM) and resistivity measurements. The growth defects inherent to annealed films were characterized, and then additional defects were introduced by radiation damage. Epitaxially grown films on (100) LaA1O3 substrates exhibited three primary types of growth defects: interface strain, column boundary mismatch, and column rotation. High resolution TEM measurements show well-ordered regions of film that offer low resistance paths for current flow around growth defects. A series of annealed samples were irradiated with 6 Mev Si+3 ions to produce 0.006 to 0.024 displacements per atom (dpa) in LCMO films, and 0.028 to 0.14 dpa in LSMO films. The peak resistance temperature (Tp) was found to depend strongly on defect concentration, varying from 235K ± 15K for the unirradiated LCMO films to 95K for 0.018 dpa. At 0.024 dpa, the LCMO film was insulating at all temperatures. LSMO films showed a downward shift in Tp from 300K for an unirradiated film to 250K for 0.028 dpa, and complete insulating behavior for 0.14 dpa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 185
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jonker, G. H. and Santen, J. H., Physica, 16, p. 337 (1950).Google Scholar
2. Zener, C., Phys. Rev. 82, p. 403 (1951).Google Scholar
3. Goodenough, J. B., Phys. Rev. 100, p. 564 (1955).Google Scholar
4. Wollan, E. O. and Koehler, W. C., Phys. Rev., 100 (2), p. 545 (1955).Google Scholar
5. Jin, S., Tiefel, T. H., McCormack, M., Fastnacht, R. A., Ramesh, R., and Chen, L. H., Science, 264, p. 413, (1994).Google Scholar
6. Millis, A. J., Littlewood, P. B. and Shraiman, B. I., Phys. Rev. Lett., 74 (25), p. 5144 (1995).Google Scholar
7. Horwitz, J. S., Dorsey, P. C., Koon, N. C., Rubenstein, M., Byers, J. M., Osofsky, M. S., Harris, V. G., Grabowski, K. S., Knies, D. L., Treece, R. E. and Chrisey, D.B., SPIE 2703 p. 526 (1996).Google Scholar
8. Xiong, G. C., Li, Q., Ju, H. L., Greene, R. L. and Venkatesan, T., Appl. Phys. Lett. 66, p. 1689 (1995).Google Scholar
9. Chen, C.-H., Talyansky, V., Kwon, C., Rajeswari, M., Sharma, R. P., Ramesh, R., Venkatesan, T., Melngailis, J., Zhang, Z. and Chu, W. K., Appl. Phys. Lett., 69 (20), p. 3089 (1996).Google Scholar
10. Roder, H., Zang, J. and Bishop, A. R., Phys. Rev. Lett., 76 (8), p. 1356 (1996).Google Scholar
11. Xiong, G. C, Zhang, B., Wu, S. C, Lu, Z. X., Kang, J. F., Lian, G. J and Dai, D. S., Solid State Comm., 97(1),p. 17 (1996).Google Scholar