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Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

Z. Sitar ,
M. J. Paisley ,
B. Yan  and
R. F. Davis
Z. Sitar
Affiliation:
Department of Materials Science and Engineering, Campus Box 7907, North Carolina State University, Raleigh, NC 27695-7907
M. J. Paisley
Affiliation:
Department of Materials Science and Engineering, Campus Box 7907, North Carolina State University, Raleigh, NC 27695-7907
B. Yan
Affiliation:
Department of Materials Science and Engineering, Campus Box 7907, North Carolina State University, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, Campus Box 7907, North Carolina State University, Raleigh, NC 27695-7907
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Abstract

Single crystal cubic or hexagonal GaN thin films have been grown on various substrates, using a modified gas source MBE technique. A standard effusion cell was employed for the evaporation of gallium. A compact electron cyclotron resonance plasma source was used to activate the nitrogen prior to deposition. The films were examined by transmission electron microscopy. The major defects in the wurtzite GaN were double positioning boundaries, inversion domain boundaries, and dislocations. The zinc-blende GaN showed microtwins, stacking faults, and dislocations. The connection between the observed structural defects and the poor electrical properties of GaN is noted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 537
Copyright
Copyright © Materials Research Society 1990

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References

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