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Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Chang-Soo Kim ,
Ji-Hyun Moon ,
Sang-Jun Lee ,
Sam-Kyu Noh ,
Je Won Kim ,
Kyuhan Lee ,
Yong Dae Choi  and
Jay P. Song
Ji-Hyun Moon
Affiliation:
SongJee Industrial Corporation, Sungnam, Korea 462-819
Sang-Jun Lee
Affiliation:
SongJee Industrial Corporation, Sungnam, Korea 462-819
Sam-Kyu Noh
Affiliation:
SongJee Industrial Corporation, Sungnam, Korea 462-819
Je Won Kim
Affiliation:
Materials Evaluation Center, Korea Research Institute of Standards and Science(KRISS), Taejon, Korea 305-600
Kyuhan Lee
Affiliation:
Materials Evaluation Center, Korea Research Institute of Standards and Science(KRISS), Taejon, Korea 305-600
Yong Dae Choi
Affiliation:
Photonic Device Group, Samsung Electro-Mechanics, Suwon, Korea 442-743
Jay P. Song
Affiliation:
Department of Optical and Electronic Physics, Mokwon University, Taejon, Korea 302-729
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Abstract

The structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.8
Copyright
Copyright © Materials Research Society 2005

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