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Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures

Published online by Cambridge University Press:  01 February 2011

Sindy Hauguth-Frank ,
Vadim Lebedev ,
Katja Tonisch ,
Henry Romanus ,
Thomas Kups ,
Hans-Joachim Büchner ,
Gerd Jäger ,
Oliver Ambacher  and
Andreas Schober
Sindy Hauguth-Frank
Affiliation:
[email protected], Technische Universität Ilmenau, Institut für Mikro- und Nanotechnologien, Gustav-Kirchhoff-Str. 7, Ilmenau, 98693, Germany
Vadim Lebedev
Affiliation:
[email protected], Fraunhofer Institute for Applied Solide State Physics, Tullastr. 72, Freiburg, 79108, Germany
Katja Tonisch
Affiliation:
[email protected], Ilmenau Technical University, Institute of Micro- and Nanotechnologies, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany
Henry Romanus
Affiliation:
[email protected], Ilmenau Technical University, Institute of Micro- and Nanotechnologies, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany
Thomas Kups
Affiliation:
[email protected], Ilmenau Technical University, Institute of Micro- and Nanotechnologies, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany
Hans-Joachim Büchner
Affiliation:
[email protected], Ilmenau Technical University, Institute of Measurement and Sensor Technology, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany
Gerd Jäger
Affiliation:
[email protected], Ilmenau Technical University, Institute of Measurement and Sensor Technology, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany
Oliver Ambacher
Affiliation:
[email protected], Fraunhofer Institute for Applied Solide State Physics, Tullastr. 72, Freiburg, 79108, Germany
Andreas Schober
Affiliation:
[email protected], Ilmenau Technical University, Institute of Micro- and Nanotechnologies, Gustav- Kirchhoff-Str. 7, Ilmenau, 98693, Germany
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Abstract

Investigations on standing wave (SW) interferometry come in focus of interest in the course of ongoing miniaturization of high precision length measurement systems. A key problem within these efforts is the development of a transparent ultra-thin photodetector for sampling the intensity profile of the generated SW. Group III-materials are promising candidates to ensure a good photodetector performance combined with the required optical transparency. In this work, we report on the interrelation of strain and dislocation density along with the influence of the structural properties on the sensitivity of double-heterostructure III-nitride photodetectors grown by molecular beam and metal organic vapour phase epitaxy.

Keywords

structuraloptoelectronicIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1076: Symposium K – Materials and Devices for Laser Remote Sensing and Optical Communication , 2008 , 1076-K03-07
Copyright
Copyright © Materials Research Society 2008

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References

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