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Structural and Opto-Electronic Properties of a-Si:H/a-SiNx:H Superlattices

Published online by Cambridge University Press:  01 February 2011

Stefan L. Luxembourg ,
Frans D. Tichelaar ,
Peter Kúš  and
Miro Zeman
Stefan L. Luxembourg
Affiliation:
[email protected], Technical University Delft, ECTM-DIMES, Feldmannweg 17, Delft, 2628 CT, Netherlands
Frans D. Tichelaar
Affiliation:
[email protected], Delft University of Technology, Kavli Institute of NanoScience, Faculty of Applied Sciences, Lorentzweg 1, Delft, 2628 CJ, Netherlands
Peter Kúš
Affiliation:
[email protected], Comenius University, Department of Experimental Physics, Bratislava, SK-842 15, Slovakia
Miro Zeman
Affiliation:
[email protected], Delft University of Technology, DIMES, Feldmannweg 17, Delft, 2628 CT, Netherlands
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Abstract

A series of multilayer structures consisting of alternating layers of hydrogenated amorphous silicon (a-Si:H) and amorphous silicon nitride (a-SiNx:H) was fabricated using plasma enhanced chemical vapor deposition. The overall thickness and a-Si:H-to-a-SiNx:H ratio was kept constant for the different multilayer samples fabricated. A blue shift of the optical bandgap was observed with decreasing a-Si:H well layer thickness. High-Resolution Transmission Electron Microscopy was used to estimate the abruptness of the layer-to-layer transitions. The thickness of the interface mixing layer for transitions from a-Si:H to a-SiNx:H was estimated to be 0.5 − 1 nm, while for the reverse transition a thickness of 2-2.5 nm was found. Results from Fourier Transform Infrared Spectroscopy support the found thickness range.

Keywords

photovoltaictransmission electron microscopy (TEM)infrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-04
Copyright
Copyright © Materials Research Society 2008

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References

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