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Structural and Microwave Characterization of Magnetron Sputtered Ba0.5Sr0.5TiO3 Films on c-plane Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Ernest Anthony Fardin ,
A. S. Holland ,
K. Ghorbani  and
B. F. Usher
Ernest Anthony Fardin
Affiliation:
[email protected], RMIT University, School of Electrical and Computer Engineering, GPO Box 2476V, Melbourne, Victoria, 3001, Australia, +61 3 9925 3250, +61 3 9925 2007
A. S. Holland
Affiliation:
[email protected], RMIT University, School of Electrical and Computer Engineering, GPO Box 2476V, Melbourne, Victoria, 3001, Australia
K. Ghorbani
Affiliation:
[email protected], RMIT University, School of Electrical and Computer Engineering, GPO Box 2476V, Melbourne, Victoria, 3001, Australia
B. F. Usher
Affiliation:
[email protected], La Trobe University, Department of Electronic Engineering, Bundoora, Victoria, 3086, Australia
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Abstract

Many studies of Barium Strontium Titanate (BST) thin films for RF / microwave applications have employed MgO, LaAlO3 or Pt/Si as the substrate material for BST deposition. However, there have been relatively few reports of BST films grown on sapphire, despite the excellent microwave properties of this material. In this investigation, BST thin films were deposited by RF magnetron sputtering on (001) single crystal c-plane sapphire substrates. Interdigitated capacitors (IDCs) patterned on the film surface were used to measure the dielectric tunability and loss tangent at microwave frequencies. Thick Au conductors were electroplated to minimize conductor losses. Post deposition annealing in air was found to significantly improve the tunability of the sputtered films.

Keywords

ferroelectricdielectric propertiessputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG09-17
Copyright
Copyright © Materials Research Society 2006

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