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Structural and Electrical Effects on (A1-Si)/n+Si Ohmic Contact of in Situ Silicon Cleaning by Ar IONS Bombardment

Published online by Cambridge University Press:  25 February 2011

A. Santangelo ,
P. Lanza ,
O. Viscuso ,
C. Magro ,
A. Scandurra ,
A. Licciardello  and
A. Torrisi
A. Santangelo
Affiliation:
Co.Ri.M.Me., Stradale Primosole 50, 95121 Catania, Italy;
P. Lanza
Affiliation:
Co.Ri.M.Me., Stradale Primosole 50, 95121 Catania, Italy;
O. Viscuso
Affiliation:
Co.Ri.M.Me., Stradale Primosole 50, 95121 Catania, Italy;
C. Magro
Affiliation:
ST Microelectronics, Stradale Primosole 50, 95121 Catania, Italy;
A. Scandurra
Affiliation:
C.N.R., I.Me.Te.M., c/o Dipartiraento di Scienze Chimiche, viale A. Doria 6, 95125 Catania, Italy;
A. Licciardello
Affiliation:
Dipartiraento di Scienze Chimiche Universital di Catania, viale A. Doria 6, 95125 Catania, Italy.
A. Torrisi
Affiliation:
Dipartiraento di Scienze Chimiche Universital di Catania, viale A. Doria 6, 95125 Catania, Italy.
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Abstract

In situ etching of native Si02 by Ar+ ion bombardment before metal sputter deposition can increase the contact resistance of the metal-semiconductor contact. This is commonly attributed to surface contamination produced by various mechanisms or to etch-induced surface damage. In this paper, in order to elucidate the cause of the increase of contact resistance, we have studied (Al-Si)/n+Si contacts prepared by various treatments of the Si surface. We attribute the higher postalloy contact resistance of the sputter etched contacts to the existence of an Al doped layer which formation was induced by the preexisting disordered layer created by the Ar+ ion bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 407
Copyright
Copyright © Materials Research Society 1991

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References

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