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Structural and Chemical Microanalysis of Oxygen-Bearing Precipitates in Silicon

Published online by Cambridge University Press:  15 February 2011

R.W. Carpenter ,
I. Chan ,
H.L. Tsai ,
C. Varker  and
L.J. Demer
R.W. Carpenter
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287
I. Chan
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287
H.L. Tsai
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287
C. Varker
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287 Motorola Semiconductor Research Laboratories, Phoenix, AZ 85008
L.J. Demer
Affiliation:
CENTER FOR SOLID STATE SCIENCE, ARIZONA STATE UNIVERSITY, TEMPE, AZ 85287 Metallurgical Engineering Dept., University of Arizona, Tucson, AZ 85721
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Abstract

Precipitation in CZ-silicon during post-growth two-stage heat treatment has been examined using the methods of high resolution analytical electron microscopy. Electron transparent specimens prepared from these specimens, exhibited a low density of plate type precipitates on {100} planes. Microdiffraction experiments showed the precipitates to be consistently non-crystalline. Electron energy loss spectra showed that the precipitates contained oxygen, but carbon was not detected. It was found that carbon artifact absorption edges could be induced in spectra by specimen contamination in the microscope. The use of a low temperature stage eliminated this problem. Complementary characteristic x-ray microanalysis showed that metallic impurities had not segregated to these precipitates in this particular case, although this has been observed elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 195
Copyright
Copyright © Materials Research Society 1982

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References

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