Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-27T03:25:14.835Z Has data issue: false hasContentIssue false
  • English
  • Français

A Structural Analysis of Thin Amorphous Silicon Films

Published online by Cambridge University Press:  26 February 2011

Ş. Erkoç ,
T. Halicioglu  and
W. A. Tiller
Ş. Erkoç
Affiliation:
Department of Physics, Middle-East Technical University, Ankara, Turkey
T. Halicioglu
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
W. A. Tiller
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Using a semiempirical potential energy function for Si, thin amorphous films of Si have been simulated on crystalline Si by a partial melting and subsequent quenching process. After relaxation at 450°K, the dominant structural feature was a dense free surface skin with a void layer underneath for both c-Si(100) and c-Si(111) substrates and for film thicknesses up to 16Å. Tetrahedral coordination was maintained throughout the amorphous region and structural differences were noted in the α-Si/c-Si interface region for the two orientations considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 177
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Olson, G. L., Kokorowski, S. A., Roth, J. A. and Hess, L. D., “Laser and Electron-Beam Solid Interactions and Materials Processing”, Gibbons, J. E., Hess, L. D. and Sigmon, T. W., Eds. (North Holland, New York, 1981) pp. 125–131.Google Scholar
2. Bagley, B. G. and Chen, H. S., “Laser-Solid Interactions and Laser Processing”, Ferris, S. D., Leamy, H. J. and Poate, J. M., Eds. (American Institute of Physics, New York, 1979) pp. 97–101.Google Scholar
3. Kokorowski, S. A., Olson, G. L., Roth, J. A. and Hess, L. D., “Laser and Electron Beam Interactions in Solids”, Appleton, B. R. and Celler, G. K., Eds. (North Holland, New York, 1982) p. 195.Google Scholar
4. Spaepen, F. and Turnbull, D., “Laser-Solid Interactions and Laser Processing”, Ferris, S. D., Leamy, H. J. and Poate, J. M., Eds. (American Institute of Physics, New York, 1979) p. 73.Google Scholar
5. Connell, G. A. N. and Street, R. A., “Handbook on Semiconductors, Vol. 3: Materials Properties and Preparation”, Keller, S. P., Ed. (North Holland, New York, 1980) pp. 689–801.Google Scholar
6. Vossen, J. L. and Kern, W., Eds. “Thin Film Processes” (Academic Press, New York, 1978).Google Scholar
7. Bienenstock, A., in “Amorphous and Liquid Semiconductors”, Proceedings of the Fifth International Conference on Amorphous and Liquid Semiconductors, Eds. Stuke, J. and Brenig, W., Garmisch-Partenkirchen, Fed. Rep. of Germany, Sept. 3-8, 1973, p. 49.Google Scholar
8. Chabal, Y. J. and Patel, C. K. N., J. Non-Crystalline Solids 77 & 78, 201 (1985).Google Scholar
9. Jung, A-L., Shi, L-Q., Lin, G., Xiong, J-J., Cao, B. S., Yu, W-Z., Jiang, H-L., Song, J-Z., Long, K., and Adler, D., J. Non-Crystalline Solids 77 & 78, 221 (1985).Google Scholar
10. Zentai, G. and Wégner, M. F., J. Non-Crystalline Solids 77 & 78, 225 (1985).Google Scholar
11. Takai, T., Halicioglu, T. and Tiller, W. A., Scrip. Metall., 19, 709 (1985).Google Scholar
12. Takai, T., Halicioglu, T. and Tiller, W. A., Phys. Stat. Sol (b) 130, 475 (1985).Google Scholar
13. Takai, T., Halicioglu, T. and Tiller, W. A. Surf. Scie., 164, 341 (1985).Google Scholar
14. Pearson, E., Halicioglu, T. and Tiller, W. A. Surf. Scie., 168, 46 (1986).Google Scholar
15. Evans, D. J. and Morriss, G. P., Computer Physics Rep., 1 299 (1984).Google Scholar
16. Nordsieck, A., math. Comp. 16, 22 (1962) and see: C. W. Gear, “Numerical Initial Value Problems in Ordinary Differential Equations”, Prentice-Hall, Princeton, NJ (1971).Google Scholar
17. Pearson, E. M., “Computer Modeling of Atomic Interactions with Application to Silicon”, Ph.D. Thesis, Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, March 1985.Google Scholar