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Published online by Cambridge University Press: 17 March 2011
With decreasing geometries of metal interconnects the demands on metallization reliability increase rapidly. In addition to electromigration, stress-induced voiding becomes a major problem, influencing lifetime and functionality of integrated circuits. This paper summarizes our studies on stressmigration behavior of various AlCu-multilevel metallizations. A model for an estimation of the median time to failure is presented.