Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T01:46:38.587Z Has data issue: false hasContentIssue false
  • English
  • Français

Stresses experienced by AlN films grown on sapphire

Published online by Cambridge University Press:  01 February 2011

Jie Bai ,
J. Bai ,
V.L. Tassev ,
M. Lal Nakarmi ,
W. Sun ,
X. Huang ,
M. Dudley ,
H. Zhang ,
D. F. Bliss  and
J. Lin
...Show all authors
Jie Bai
Affiliation:
[email protected], State University of New York at Stony Brook, Department of Materials Science and Engineering, 314 Old Engineering Bldg., Stony Brook, NY, 11794-2275, United States, 631-827-6482, 631-632-8052
J. Bai
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2275
V.L. Tassev
Affiliation:
Air Force Research Laboratory, Sensors Directorate, 80 Scott Road, Hanscom AFB, MA 01731
M. Lal Nakarmi
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506-2601
W. Sun
Affiliation:
Departement of Electrical Engineering, Swearingen Engineering Center, Univeristy of South Carolina, SC 29208
X. Huang
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2275
M. Dudley
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2275
H. Zhang
Affiliation:
Department of Mechanical Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2300
D. F. Bliss
Affiliation:
Air Force Research Laboratory, Sensors Directorate, 80 Scott Road, Hanscom AFB, MA 01731
J. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506-2601
H. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506-2601
J. Yang
Affiliation:
Departement of Electrical Engineering, Swearingen Engineering Center, Univeristy of South Carolina, SC 29208
M. Asif Khan
Affiliation:
Departement of Electrical Engineering, Swearingen Engineering Center, Univeristy of South Carolina, SC 29208
Get access

Abstract

The evolution of stress during the MOCVD growth of AlN thin films on sapphire substrates under both low and high temperature conditions has been evaluated. The final stress state of the films is assumed to consist of the summation of stresses from three different sources: (1) the stress which arises from residual lattice mismatch between film and substrate i.e. that which persists after partial relaxation by misfit dislocation formation. The extent of relaxation is determined from High Resolution TEM analysis of the substrate/film interface; (2) the stress arising from the coalescence of the 3D islands nucleated in this high mismatch epitaxy process. This requires knowledge of the island sizes just prior to coalescence and this was provided by AFM studies of samples grown under the conditions of interest; and (3) the stress generated during post-growth cooling which arises from the differences in thermal expansion coefficient between AlN and sapphire. The final resultant stress, comprising the summation of stresses arising from these three sources, is found to be tensile in the sample grown at lower temperature and compressive in the sample grown at higher temperature. These results are in general qualitative agreement with results of TEM and High resolution X-ray diffraction (HRXRD) studies, which show evidence for tensile and compressive stresses in the low temperature and high temperature cases, respectively.

Keywords

III-Vstress/strain relationshipepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF26-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Davydov, V. Yu., Klochikhin, A. A. et al. ., Phys. Stat. Sol. (b) 230, 4 (2002)3.0.CO;2-Z>CrossRef3.0.CO;2-Z>Google Scholar
[2] Böttcher, T., Einfeldt, E., Figge, S., Chierchia, R., Heinke, H., Hommel, D., Speck, J.S., Appl. Phys. Lett. 78 (2001) 1976.CrossRefGoogle Scholar
[3] Waltereit, P., Brandt, O., Trampert, A., Ramsteiner, M., Reiche, M., Qi, M., Ploog, K.H., Appl. Phys. Lett. 74 (1999) 3660.CrossRefGoogle Scholar
[4] Raghavan, S., Redwing, J.M. J. Appl. Phys. 96 (2004) 2995.CrossRefGoogle Scholar
[5] Etzkorn, E. V., Clarke, D. R., J. Appl. Phys. 82 (2001) 1025.CrossRefGoogle Scholar
[6] Einfeldt, S., Bottcher, T., Figge, S., Hommel, D., J. Cryst. Growth 230 (2001) 357.CrossRefGoogle Scholar
[7] Nix, W. D., Clemens, B. M., J. Mater Res. 14 (1999) 3467.CrossRefGoogle Scholar
[8] Ashmawi, W.M., Zikry, M.A., Wang, K., Reeber, R.R., J. Cryst. Growth 266 (2004)415.CrossRefGoogle Scholar
[9] Ahmad, I., Holtz, M., Faleev, N.N., Temkin, H., J. Appl. Phys. 95 (2004) 1692.CrossRefGoogle Scholar
[10] Nikitina, I.P., Sheglov, M.P., Melnik, Yu.V., Irvine, K.G., Dmitriev, V.A., Diamond Related Mater. 6 (1997) 1524.CrossRefGoogle Scholar
[11] Lubis, A. H., Hecht, N. L., Graves, J. G. A., J. Am. Ceram. Soc. 82 (1999) 2481.CrossRefGoogle Scholar