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Stresses and Adhesion of Thin Polycrystalline 3C SiC Films Grown by CVD on Silicon Substrates

Published online by Cambridge University Press:  22 February 2011

L.M. Ivanova ,
V.V. Kovalenko  and
T.M. Tkacheva
L.M. Ivanova
Affiliation:
The A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninski pr. 49, 117334, Moscow, Russia
V.V. Kovalenko
Affiliation:
The A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninski pr. 49, 117334, Moscow, Russia
T.M. Tkacheva
Affiliation:
The A.A. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninski pr. 49, 117334, Moscow, Russia
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Abstract

SiC thin films less than 1 μm thick are grown by thermal decomposition of CH3SiC13 in a hydrogen atmosphere in an open CVD system. The interface stress is shown to be depend on the growth conditions. The optimal conditions for the preparation of uniform SiC films have been determined. Thermal annealing of the films has also been studied, and the conditions that provide for relaxation of the interface stresses are determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 327: Symposium N – Covalent Ceramics II: Non-Oxides , 1993 , 305
Copyright
Copyright © Materials Research Society 1994

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References

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