Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T15:04:20.468Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress-assisted Copper-induced Lateral Growth of Polycrystalline Germanium

Published online by Cambridge University Press:  01 February 2011

B. Hekmatshoar ,
D. Shahrjerdi ,
S. Mohajerzadeh ,
A. Khakifirooz ,
M. Robertson  and
A. Afzali-Kusha
B. Hekmatshoar
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, [email protected].
D. Shahrjerdi
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, [email protected].
S. Mohajerzadeh
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, [email protected].
A. Khakifirooz
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, [email protected].
M. Robertson
Affiliation:
Department of Physics, Acadia University, Wolfville, NS B4P 2R6, Canada
A. Afzali-Kusha
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, [email protected].
Get access

Abstract

Lateral growth of poly-Ge at temperatures as low as 150°C is reported. External mechanical stress has been properly manipulated to drive the low temperature Cu-induced crystallization of poly-Ge wherever Cu is deposited to form the crystallization seed for lateral growth. Uniaxial compressive stress has been externally applied to the Ge layer by bending the flexible PET substrate inward. A 10-hour period thermo-mechanical post-treatment in the presence of 0.05% equivalent compressive strain leads to a growth rate of 2.5 μm/hour in the direction of the applied stress and 1.8 μm/hour in the perpendicular direction, as confirmed by SEM analysis. We believe that partial growth of the Cu-seeded poly-Ge region in the form of tetragonal structures is the key feature which leads to the lateral growth of the pure-Ge strip. Elimination of the compressive stress hinders the lateral growth completely, even at reasonably high temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U6.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Teschler, L., Machine Design, 74, 59 (2002)Google Scholar
[2] Jurichich, S., Wood, S. C. and Saraswat, K. C., IEEE Trans. Semiconductor Manufacturing, 9, 562 (1996)Google Scholar
[3] Missana, T., Ofonso, C. N., Petford-Long, A. K., and Doole, R. C., Appl. Phys. Lett. 69, 2039 (1996)Google Scholar
[4] Konno, T. J. and Sinclair, R., Mater. Sci. Eng., A 179, 426 (1994)Google Scholar
[5] Konvács, I., Harmat, P., Sulyok, A., and Radnoczi, G., Thin Solid Films 317, 34 (1998)Google Scholar
[6] Katsuki, F., Hanafusa, K., and Yonemora, M., J. Appl. Phys. 89, 4643 (2001)Google Scholar
[7] Doyle, J. P., Svensson, B. G., and Johanson, S., Appl. Phys. Lett. 67, 2804 (1995)Google Scholar
[8] Khakifirooz, A., Mohajerzadeh, S. S., Haji, S., and Asl, E. Soleimani, Proc. MRS Spring Meeting, 618, 255 (2001).Google Scholar
[9] Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Goodarzi, a. and Robertson, M., J. Vac. Sci. Technol, A 21, 752 (2003)Google Scholar
[10] Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Akhavan, A. and Robertson, M., Proc. MRS Spring Meeting, 769, H6.11 (2003)Google Scholar
[11] Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S. and Khakifirooz, A., Proc. IEEE 61th Device Research Conference, 85 (2003)Google Scholar
[12] Lee, S. W. and Joo, S. K., IEEE Electron Device Lett., 17, 160 (1996)Google Scholar
[13] Bhat, G. A., Jin, Z., Kwok, H. S., and Wong, M., IEEE Electron Device Lett., 20, 167 (1999)Google Scholar
[14] Sato, S., Nozaki, S., and Morisaki, H. and Iwase, M., Appl. Phys. Lett., 66, 3176 (1995)Google Scholar
[15] Xu, J.L., Chen, J.L., Feng, J.Y., Nuclear Instruments and Methods in Physics Research, B 194, 297 (2002)Google Scholar