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Stress Mapping Near Simulated Defects in Thin Film Wiring Using X-ray Microbeam Diffraction

Published online by Cambridge University Press:  21 February 2011

Patrick Dehaven  and
Charles Goldsmith
Patrick Dehaven
Affiliation:
IBM Analytical Services, Hopewell Junction, NY; and Sundar Kamath, IBM Technology Products, Hopewell Junction, NY
Charles Goldsmith
Affiliation:
IBM Analytical Services, Hopewell Junction, NY; and Sundar Kamath, IBM Technology Products, Hopewell Junction, NY
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Abstract

The stress distribution about a series of deliberately fabricated defects in a Cu/Ni/Au/Cr redundant metal stack deposited on a Cr/Cu/Cr serpentine has been studied via x-ray microbeam diffraction using the sin2 ψ, technique. Strong directional anisotropies in the stress were found for both the second level nickel and copper. The extent of nickel stress relaxation from the edge of a defect far exceeded that predicted by a simple metal on substrate model. The size of the defect did not appear to significantly influence the stress distribution in the second level metal; however, the data suggest that the linewidth may influence the magnitude of the stress along the length of a line when near a defect or other sharp discontinuity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 275
Copyright
Copyright © Materials Research Society 1993

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