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Stress Dependence of the Velocity of Threading Dislocation Segments in Si - Ge Heteroepggaxial Films.

Published online by Cambridge University Press:  15 February 2011

Veronique T. Gillard ,
David B. Noble  and
William D. Nix
Veronique T. Gillard
Affiliation:
Stanford University, Department of Materials Science and Engineering, Building 550, Stanford, CA 94305
David B. Noble
Affiliation:
Currently at Spectrum Analysis Inc., 39500 Stevenson Place, Suite 103, Fremont, CA 94539
William D. Nix
Affiliation:
Stanford University, Department of Materials Science and Engineering, Building 550, Stanford, CA 94305
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Abstract

This paper presents data for threading dislocation velocities measured in Si-Ge heteroepitaxial thin films during in situ HVTEM annealing experiments. These data are compared to three models which were previously developed to describe the kink mode of dislocation motion. Two of these models, Hirth and Lothe [1] and Seeger-Schiller [2], are based on the discrete narrow kink representation. The other, developed by Büttiker and Landauer [3], is based on the macroscopic bulge model representation of the dislocation line. It is found that both the narrow kink models underestimate dislocation velocities in the stress range of the experiments and that a good representation of the data can be obtained by using the macroscopic bulge model in the dislocation length-dependent regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 411
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Hirth, J. P. and Lothe, J., Theory of Dislocations, 2nd ed. (John Wiley and Sons, New York, 1982)Google Scholar
2 Seeger, A. and Schiller, P., Acta Met., 10, 348 (1962)Google Scholar
3 Büttiker, M. and Landauer, R., Phys. Rev. A, 23, 1397 (1981).Google Scholar
4 Houghton, D. C., J. Appl. Phys., 70, 2136 (1991)CrossRefGoogle Scholar
5 Bean, J. C. and Hull, R., Scripta Met., 27, 663 (1992)Google Scholar
6 Dodson, B. W. and Tsao, J. Y., Appl. Phys. Lett., 53, 2498 (1988)Google Scholar
7 Tuppen, C. G. and Gibbings, C. J., J. Appl. Phys., 68, 1526 (1990)Google Scholar
8 Gillard, V. T., Noble, D. B., and Nix, W. D. in Thin Films: Stresses and Mechanical Properties III, edited by Nix, W. D., Bravman, J. C., Arzt, E., and Freund, L. B. (Mater. Res. Soc. Proc. Pittsburgh, 239, PA, 1992) pp. 395–400.Google Scholar
9 Nadgornyi, E., Dislocation Dynamics and Mechanical Properties of Crystals, in Progress in Materials Science, 31, edited by Christian, J. W., Haasen, P., and Massalski, T. B. (Pergamon Press, New York, 1988)Google Scholar
10 Imai, M. and Sumino, K., Phil. Mag. A, 47, 599 (1983)Google Scholar
11 Noble, D. B., PhD. Dissertation, Stanford University (1991)Google Scholar