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Stress Dependence of Crystal Structure of Polycrystalline BiFeO3 Thin Films on Membrane Structure Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Seiji Nakashima ,
Dan Ricinschi ,
Yoshitaka Nakamura ,
Masanori Okuyama ,
Hironori Fujisawa  and
Masaru Shimizu
Seiji Nakashima
Affiliation:
[email protected], Osaka University, Graduate school of Engineering Science, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan, +81-6-6850-6332, +81-6-6850-341
Dan Ricinschi
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyakma-cho, Toyonaka, 560-8531, Japan
Yoshitaka Nakamura
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyakma-cho, Toyonaka, 560-8531, Japan
Masanori Okuyama
Affiliation:
[email protected], Graduate school of Engineering Science, Osaka University, Division of Advanced Electronics and Optical Science, Department of Systems Innovation, 1-3 Machikaneyakma-cho, Toyonaka, 560-8531, Japan
Hironori Fujisawa
Affiliation:
[email protected], Graduate school of Engineering, University of Hyogo, Department of Electrical Engineering and Computer Sciences, 2167 Syosya, Himeji, 671-2201, Japan
Masaru Shimizu
Affiliation:
[email protected], Graduate school of Engineering, University of Hyogo, Department of Electrical Engineering and Computer Sciences, 2167 Syosya, Himeji, 671-2201, Japan
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Abstract

An Influence of stress of crystal structure of polycrystalline BiFeO3 (BFO) thin film on membrane structure has been investigated. To confirm the stress dependence of the crystal structure, reciprocal space mapping measurement of polycrystalline BFO thin films on Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (625 μm) plate substrate and Pt (200 nm)/TiO2 (50 nm)/SiO2 (600 nm)/Si (15 μm) membrane substrate have been performed. These BFO thin films have been prepared by pulsed laser deposition (PLD). The obtained BFO thin films were polycrystalline and mainly oriented to (001) and (110) plane. From reciprocal space mapping measurement, (110) oriented BFO grains on Pt/TiO2/SiO2/Si (15 μm) membrane substrate were expanded perpendicularly to the film plane about 0.15% and compressed in parallel to the film plane about 0.7% comparing to that on Pt/TiO2/SiO2/Si (625 μm) plate substrate. And (001) oriented BFO grains on the Pt/TiO2/SiO2/Si membrane substrate were expanded about 0.20% perpendicularly to the film plane and compressed about 1.3% in parallel to the film plane comparing to that on Pt/TiO2/SiO2/Si (625 μm) plate substrat

Keywords

ferroelectricitythin filmferroelectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K03-09
Copyright
Copyright © Materials Research Society 2008

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