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Stress and Phase Engineered ZrO2/Ge for High-k Dielectric Applications

Published online by Cambridge University Press:  08 May 2015

Narayan K. V. L.V. Achari ,
Amiya Banerjee  and
Srinivasan Raghavan
Narayan K. V. L.V. Achari
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-12, India. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore-12, India.
Amiya Banerjee
Affiliation:
Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore-12, India.
Srinivasan Raghavan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore-12, India. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore-12, India.
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Abstract

ZrO2/Ge is potential high-k dielectric candidate to replace silicon based devices. Controlling stress in zirconia film and stabilizing high dielectric constant phase is crucial for high-k application. A precise control of stress and phase selectivity in high-k thin films is demonstrated. Thin films of ZrO2 were grown by reactive sputter deposition. Wide range of growth stress in thin films from -0.3 to -2.8 GPa can be tuned by growth rate control. Adatom incorporation into grain boundary was the dominant source of observed stress. Phase selectivity in zirconia was achieved by tuning growth parameters.

Keywords

thin filmoxidedielectric properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1746: Symposium GG – Nanomaterials for Harsh Environment Sensors and Related Electronic and Structural Components—Design, Synthesis, Characterization and Utilization , 2015 , mrsf14-1746-gg02-09
Copyright
Copyright © Materials Research Society 2015 

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