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The Stress and Microstructure analysis of Polycrystalline Silicon Films Deposited by LPCVD

Published online by Cambridge University Press:  11 July 2012

Y.T. Cherng ,
M.C. Boysel  and
B.D. Gates
Y.T. Cherng
Affiliation:
4DLABS, Simon Fraser University 8888 University Drive, Burnaby, BC, Canada
M.C. Boysel
Affiliation:
4DLABS, Simon Fraser University 8888 University Drive, Burnaby, BC, Canada
B.D. Gates
Affiliation:
4DLABS, Simon Fraser University 8888 University Drive, Burnaby, BC, Canada Chemistry Department, Simon Fraser University 8888 University Drive, Burnaby, BC, Canada
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Abstract

Amorphous (a-Si) and polycrystalline silicon(c-Si) films have been obtained by low pressure chemical vapor deposition (LPCVD) in fixed silane flow at low pressure (200 mtorr) with variable growth temperature. Measurement of residual stress of polysilicon films growth between 570°C to 620°C was reported. Residual stress of polycrystalline silicon depends on film microstructure. The poly-silicon microstructure is a strong function of LPCVD growth temperature and pressure. In this work, Raman Scattering and X-ray diffraction (XRD) were used to study the film structure and composition. The multilayer optical model of Spectroscopic ellipsometry (SE) was used to crosscheck the crystallinity fraction. The surface roughness was identified by Atomic force microscopy (AFM) and SE. The residual stress changed from compressive to tensile and back to compressive for deposition temperature between 570°C and 620°C. Film’s c-Si fraction increased as a function of deposition temperature. The roughness surface was found at deposition temperature of 580°C. For deposition temperature larger then 580°C, all films shown (200) texture. The (220) grain size increased from 18.6 nm to 25 nm when deposition temperature increased from 580°C to 620°C. The film residual stress change can be explained by grain structure, surface stress and volume stress. At deposition temperature from 580°C to 587°C, grain is equi-axes type and volume stress dominate which cause the tensile stress. For temperature higher then 587°C inverse conical grain formed from oxide interface to surface and surface stress dominate cause the stress back to compressive. The columnar structure formed when deposition temperature > 600°C, grain growth push the compressive stress decrease again.

Keywords

chemical vapor deposition (CVD) (deposition)microstructureoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 263 - 268
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Kamins, T., “Poly crystalline silicon for integrated circuits and displays” 2 nd, Kluwer Academic Publishers, 57-122 (1988)CrossRefGoogle Scholar
French, P. J., Sensor and actuators A. 99, 3 (2002).CrossRefGoogle Scholar
Vetterl, O., Finger, F., Carius, R., Hapke, P., Houben, L., Kluth, O., Lamberta, A., muck, A., Rech, B., and Wagner, H., Solar Energy & Solar Cells 62, 97(2000).CrossRefGoogle Scholar
Oei, D-G. and Mccarthy, S.L., Mat. Res. Soc. Symp. Proc. Vol. 276, 85(1992).CrossRefGoogle Scholar
Boyer, P. T., Imbernon, E., Rousset, B and Scheid, E., Mat. Res. Soc. Symp. Proc. Vol. 518, 209 (1992).CrossRefGoogle Scholar
Krulevitch, P., Nguyen, T.D., Johnson, G.C., Howe, R.T., Werk, H.R. and Gronsky, R., Mat. Res. Soc. Symp. Proc. Vol. 202, 167 (1991).CrossRefGoogle Scholar
Chowdhury, A. and Ray, S., Phys. Status Solidi. C7, 628 (2010).Google Scholar
Furukawa, S. and Miyasato, T., Phys. Rev. B. 38, 5726 (1988)CrossRefGoogle Scholar
Tsu, R., G-Hernandez, J., Chao, S., Lee, SC. and Tanaka, K., Appl. Phys. Lett. 40, 537 (1982).CrossRefGoogle Scholar
Modreanu, M., Gartner, M., Cobianu, C., Looney, B.O. and Murphy, F., Thin Solid films 450, 105 (2004).CrossRefGoogle Scholar
Kkinuma, K., Mohri, M., Sakamoto, M. and Tsuruka, T., J. Appl. Phys. 70, 7374 (1991).CrossRefGoogle Scholar
Joubert, P., Loisel, B., Chouan, Y. and Haji, L., J. Electrochem. Soc. 134, 2541 (1987).CrossRefGoogle Scholar
Flueraru, C., Gartner, M., Dascalu, D. and Rotru, C., J. Phys. III France 6, 225 (1996).CrossRefGoogle Scholar