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Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

Published online by Cambridge University Press:  10 February 2011

Chia-Liang Yu ,
Paul A. Flinn ,
Seok-Hee Lee  and
John C. Bravman
Chia-Liang Yu
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
Paul A. Flinn
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
Seok-Hee Lee
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
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Abstract

The mechanisms of stress generation and stress relaxation of LPCVD silicon thin films were studied using high temperature wafer curvature measurements. The stresses generated during depositions are measured as functions of deposition temperature and microstructure. Amorphous silicon deposited with a compressive stress shows a large stress change toward tensile during crystallization. The stress relaxation of polysilicon films deposited with tensile stresses can be described by a deformation model from Ashby and Frost [1]. The polysilicon films deposited with compressive stresses have hydrogen incorporated during deposition and shows hydrogen evolution during thermal cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 403
Copyright
Copyright © Materials Research Society 1997

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