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Stress Analysis of Strained Superlattices.

Published online by Cambridge University Press:  01 February 2011

R. Peleshchak  and
H. Khlyap
R. Peleshchak
Affiliation:
State Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
H. Khlyap
Affiliation:
University of Technology, E.-Schroedinger str. 56, D-67663 Kaiserslautern, Germany, and 8tate Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine
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Abstract

The latest successful development of smart technologies, in particular, molecular-beam epitaxy technique and pulse-laser deposition method, made it possible to manufacture optoelectronic active elements based on semiconductor materials with sufficient mismatch of the lattice parameters. This problem is of special interest for preparing photosensitive devices with strained superlattices. The paper focuses on the analysis of charge carriers behavior in mechanically strained superlattices based on semiconductor materials from A2B6 and A4B6 (ZnSe, ZnTe and PbS) playing an important role in the optoelectronics design. Computational modeling is settled on the solution of one-dimensional Schroedinger equation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O4.13
Copyright
Copyright © Materials Research Society 2005

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