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Strain-Induced Phononic and Structural Response in Wurtzite-Gallium Nitride Nanowires

Published online by Cambridge University Press:  31 May 2013

Jarvis Loh  and
Dominique Baillargeat
Jarvis Loh*
Affiliation:
CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553
Dominique Baillargeat
Affiliation:
CNRS-International-NTU-Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore 637553
*
*[email protected]
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Abstract

Gallium nitride (GaN) nanowires exist in a myriad of cross-sectional shapes. In this study, a series of classical molecular dynamics simulations is performed to investigate the strain-phononics-structure relationship in rectangular and triangular wurtzite (Wz) - GaN nanowires. The thermal conductivity of the nanowires is linearly dependent on the uniaxial strain in both compressive and tensile regimes, and shows no significant dissimilitude for the same amount of strain exerted on the two types of nanowire. This is coherent with an analytical approach using the Boltzmann transport theory. However, the thermomechanical behaviour at the vertex regions shows palpable differences between the two subfamilies, relative to the non-vertex faceted regions, as the structural morphology is most disparate at the vertices.

Keywords

thermal conductivitysimulationstructural
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1548: Symposium N – Nanomaterials in the Subnanometer-Size Range , 2013 , mrss13-1548-n05-03
Copyright
Copyright © Materials Research Society 2013 

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