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Strained Layer Epitaxy: The Role of a Capping Layer and mechanism of Strain Compensation in Multilayers Systems

Published online by Cambridge University Press:  15 February 2011

I. Lefebvre ,
C. Priester ,
G. Allan  and
M. Lannoo
I. Lefebvre
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
C. Priester
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
G. Allan
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
M. Lannoo
Affiliation:
IEMN Dept ISEN, 41, Bvd Vauban 59046 LILLE CEDEX, FRANCE
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Abstract

Within a valence force field framework, we calculate the critical thickness of a film lattice mismatched to the substrate on which it is epitaxially deposited. A capping layer lattice matched to the substrate is known to enhance the critical thickness. We calculate the efficiency of the capping layer and study how the capping layer thickness modifies this efficiency. We also demonstrate how using a capping layer which is no more lattice matched to the substrate may improve the effect of the capping layer. Extension to strain compensation in multilayer systems is provided. In the case of uncapped systems, or systems with a thick capping layer lattice matched to the substrate, the results we have obtained using a microscopic description are compared to recent results, obtained using continuous classical elasticity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 363
Copyright
Copyright © Materials Research Society 1994

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References

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