Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T16:33:37.298Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

Published online by Cambridge University Press:  11 February 2011

Koji Usuda ,
Tomohisa Mizuno ,
Tsutomu Tezuka ,
Naoharu Sugiyama ,
Yoshihiko Moriyama ,
Shu Nakaharai  and
Shin-ichi Takagi
Koji Usuda
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Tomohisa Mizuno
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Tsutomu Tezuka
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Naoharu Sugiyama
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Yoshihiko Moriyama
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Shu Nakaharai
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Shin-ichi Takagi
Affiliation:
MIRAI Project, ASET, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212–8582, Japan.
Get access

Abstract

Strained-Si-On-Insulator (Strained-SOI) MOSFETs are one of the most promising device structures for high speed and/or low power CMOS. In realizing strained-Si MOS LSI, fabrication of strained-Si MOSFETs with small sizes are indispensable and thus, the investigation of the strain relaxation is an important issue. Therefore, the strain relaxation of strained-SOI mesa islands with small active area was investigated in this study. Thin strained-Si films were grown on thin relaxed SiGe-on-insulator (SGOI) structures (x=0.28). The isolation process was carried out by using chemical-dry-etching (CDE) to fabricate samples with small active areas. Using Raman spectroscopy with resolution of > 1 micron meter, strained-Si islands on SGOI substrates with the size of 5 micron meter square were investigated. Rapid-thermal-annealing (RTA) in N2 atmosphere was performed to study the strain relaxation during heating processes. As a result, it was confirmed that the strained-Si layers grown on relaxed SiGe (x=0.28) before and after mesa isolation, down to 5 micron meter in size, had almost no relaxation after the RTA process at 1000°C. Furthermore, it was confirmed that the nano-beam electron diffraction (NBD) measurement showed similar tendency regarding the strain relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G13.8
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Weiser, J.J., Hoyt, J.L. and Gibbons, J.F., Electron Device Lett. 15, 100 (1994)Google Scholar
2. Takagi, S., Hoyt, J.L., Weiser, J.J. and Gibbons, J.F., J. Appl. Phys. 80, 1567 (1996)Google Scholar
3. Oberhuber, R., Zandler, G. and Vogl, P., Phys. Rev. B 58, 9941 (1998)Google Scholar
4. Koguchi, M., Nakamura, K. and Umemura, K., Ext. Abs. B-3–2, International Conference on Solid State Devices and Materials (2001)Google Scholar
5. Mizuno, T., Takagi, S., Sugiyama, N., Koga, J., Tezuka, T., Usuda, K., Hatakeyama, T., Kurobe, A. and Toriumi, A., IEDM Tech. Dig., 934 (1999)Google Scholar
6. Mizuno, T., Takagi, S., Sugiayma, N., Satake, H., Kurobe, A. and Toriumi, A., IEEE Electron Device Lett. 21, 230 (2000)Google Scholar
7. Mizuno, T., Sugiyama, N., Tezuka, T. and Takagi, S., Appl. Phys. Lett., 80, 601 (2002)Google Scholar
8. Mizuno, T., Sugiyama, N., Tezuka, T., Numata, T. and Takagi, S., Symp. VLSI Tech. Dig., p.106 (2002)Google Scholar
9. Tezuka, T., Sugiyama, N., Mizuno, T., Suzuki, M. and Takagi, S., Jpn. J. Appl. Phys. 40, 2866 (2001)Google Scholar