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Strain Relaxation and Surface Roughness as a Function of Growth Temperature in Linearly Graded InxAl1-xAs (x=0.05 to 0.25) Buffers

Published online by Cambridge University Press:  21 February 2011

J.A. Olsen ,
E.L. Hu ,
S.R. Lee ,
I.J. Fritz ,
A.J. Howard ,
B.E. Hammons  and
J.Y. Tsao
J.A. Olsen
Affiliation:
Dept. of Materials Engineering, Univ.of California, Santa Barbara, CA 93106
E.L. Hu
Affiliation:
Dept. of Materials Engineering, Univ.of California, Santa Barbara, CA 93106
S.R. Lee
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
I.J. Fritz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
A.J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
B.E. Hammons
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
J.Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0603
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Abstract

The relation of relaxation to surface morphology in linearly-graded InAlAs was examined as a function of growth temperature using x-ray diffraction and atomic force microscopy (AFM). Samples were grown at temperatures ranging from 370°C to 550°C. Weak diffraction features for samples grown at 370°C and 420°C limited determination of the extent of their relaxation . The fractional relaxation of samples grown between 470°C to 550°C was essentially identical (~77%) and symmetric in orthogonal [110] directions. The character of the surface morphology changed from random small scale roughness to a roughness more periodic in nature as the growth temperature increased. Although no asymmetry was observed in the relaxation, the roughness developed an asymmetry at higher growth temperatures with more prominent ridges along [110]-[110].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 395
Copyright
Copyright © Materials Research Society 1994

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