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STRAIN MEASUREMENT IN EPITAXIAL NiSi2/Si(lll) BY MeV ION CHANNELING

Published online by Cambridge University Press:  28 February 2011

MASAKO OKAMOTO ,
SHIN HASHIMOTO ,
B.D. HUNT ,
L.J. SCHOWALTER  and
W.M. GIBSON
MASAKO OKAMOTO
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
SHIN HASHIMOTO
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
B.D. HUNT
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301.
L.J. SCHOWALTER
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
W.M. GIBSON
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
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Abstract

Strains in both type-A and type-B NiSi2 epitaxial films grown on Si(lll) substrates were measured by means of MeV 4He+ ion channeling. The results show the critical thickness to maintain pseudomorphic growth strongly depends on theepitaxial orientation of the NiSi2 film. The difference in critical thicknesses between type-A and type-B NiSi2 can be explained by considering the different type of misfit dislocations introduced at the interface. Namely, at the type-B interface, 1/<112> partial dislocations associated with interface steps are allowed while they are prohibited at the type-A interface. Dislocation densities measured by TEM also support these results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 157
Copyright
Copyright © Materials Research Society 1986

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